Long-term drift mechanism of Ta2O5 gate pH-ISFETs

Sensors and Actuators, B: Chemical

Volumn 64, Issue 1-3, 2000, Pages 152-155

  Ito, Yoshitaka ^a  

^a Research and Development Center   (Japan)

Author keywords

Drifts of ISFET; IMCS7; Long term stability of pH ISFET; pH ISFET

Indexed keywords

EID: 0043058797     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00499-2     Document Type: Article

References (5)

1. Y. Ito, Stability of ISFET and its new measurement protocol, in: The 7th International Meeting on Chemical Sensors, Beijing July 27-30, 1998, pp. 491-493.
2. Y. Ito, Fabrication of planar ISFET with PN junctions, in: Collection of Drafts for Meeting No. 46 of the Applied Physical Society (Japan), 1985, p. 776.
3. Y. Ito, Sensing properties of planar ISFET, in: Digest of the 5th Chemical Sensor Symposium (Japan), 1986, pp. 3-4.
4. T. Mikolajick, R. Kuhnhold, H. Ryssel, The pH-sensing properties of tantalum pentoxide films fabricated by metal organic chemical vapor deposition, Sens. Actuators, B 44 (1997) 262-267.
5. 5-films for storage dielectrics of 64-Mb DRAMs, IEEE Trans. Electron Devices ED-38 (1991) 455-462.