High-k dielectrics for use as ISFET gate oxides

Proceedings of IEEE Sensors

Volumn 2, Issue , 2004, Pages 677-680

  Van Der Wal, P D ^a   Briand, D ^a   Mondin, G ^a   Jenny, S ^a   Jeanneret, S ^a   Millon, C ^b   Roussel, H ^b   Dubourdieu, C ^b   De Rooij, N F ^a  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b CNRS   (France)

Author keywords

HfO2; High k oxides; ISFETs; Ta2O5

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; PH EFFECTS;

HFO2; HIGH-K OXIDES; PH-SENSITIVITY; TA2O5;

DIELECTRIC MATERIALS;

EID: 27944494012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M.J. Schöning et al. "CIP (cleaning-in-place)-suitable "non-glass" pH sensor based on a Ta2O5-gate EIS structure" Technical Digest Eurosensors XVIII, Rome (2004), pp 660-661
2. H. H. van den Vlekkert et al., "Design, fabrication and characterization of pH-sensitive ISFETs, Analusis, 16, pp. 110-119, 1988.
3. rd ECS Meeting, Paris (2003), pp 790-797.
4. rd ECS Meeting, Paris (2003), pp 907-914.