Semiconductor characterization of Cr3+-doped titania electrodes with p-n homojunction devices

Thin Solid Films

Volumn 516, Issue 8, 2008, Pages 1998-2002

  Liau, Leo Chau Kuang ^a   Lin, Chu Che ^a  

^a YUAN ZE UNIVERSITY   (Taiwan)

Author keywords

Cr3+ doped TiO2; I V measurement; p n junction; TiO2 electrode

Indexed keywords

ELECTRODES; FILM THICKNESS; NANOSTRUCTURED MATERIALS; SOL-GEL PROCESS; TITANIUM DIOXIDE;

FABRICATION CONDITIONS; HEATING TEMPERATURE; HOMOJUNCTION DEVICES;

SEMICONDUCTOR MATERIALS;

EID: 38649097851     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.025     Document Type: Article

References (10)

1. Grazel M. J. Photochem. Photobiol. C Photochem. Rev. 4 (2003) 145
2. Siripala W., Ivanovskaya A., Jaramillo T.F., Bawck S.H., and McFarland E.W. Sol. Energy Mater. Sol. Cells 77 (2003) 229
3. Bandara J., and Weerasinghe H.C. Sol. Energy Mater. Sol. Cells 88 (2005) 341
4. Zhang X.-T., Liu H.-W., Taguchi T., Meng Q.-B., Sato O., and Fugishima A. Sol. Energy Mater. Sol. Cells 81 (2004) 197
5. Sze S.M. Semiconductor Devices, Physics & Technology (1985), John Wiley & Sons, New York, USA
6. Bandara J., Pradeep U.W., and Bandara R.G.S.J. J. Photochem. Photobiol., A Chem. 170 (2005) 273
7. Wang Y., Hao Y., Ma J., Li W., and Cai S. Thin Solid Films 349 (1999) 120
8. Sen S., Mahanty S., Roy S., Heintz O., Bourgeois S., and Chaumont D. Thin Solid Films 474 (2005) 245
9. Wang Y., Hao Y., Cheng H., Ma J., Xu B., Li W., and Cai S. J. Mater. Sci. 34 (1999) 2773
10. Uekaea N., Kajiwara J., Kakegawa K., and Sasaki Y. J. Colloid Interface Sci. 250 (2002) 285