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Volumn , Issue , 2011, Pages 1285-1290

Stochastic circuit reliability analysis

Author keywords

Aging; Design for Reliability; Failure Resilience; HBD; Hot Carrier Degradation; NBTI; SBD; TDDB

Indexed keywords

AGING; DESIGN FOR RELIABILITY; FAILURE-RESILIENCE; HBD; HOT CARRIER DEGRADATION; NBTI; SBD; TDDB;

EID: 79957546177     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (12)

References (13)
  • 1
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    • Gielen, G.1
  • 2
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    • Statistical analysis during the reliability simulation
    • C. Bestory et al, "Statistical analysis during the reliability simulation," Microelectronics Reliability, 2007.
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    • Bestory, C.1
  • 3
    • 79957549645 scopus 로고    scopus 로고
    • Quasi-Linear Variability-Aware Reliability Simulation of Mixed-Signal ICs
    • E. Maricau et al, "Quasi-Linear Variability-Aware Reliability Simulation of Mixed-Signal ICs," in DATE, 2010.
    • (2010) DATE
    • Maricau, E.1
  • 4
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    • Tu, R.1
  • 5
    • 77953091590 scopus 로고    scopus 로고
    • IC reliability simulator ARET and its application in design-for- reliability
    • X. Xuan et al, "IC reliability simulator ARET and its application in design-for-reliability," in ATS, 2003.
    • (2003) ATS
    • Xuan, X.1
  • 6
    • 79957543537 scopus 로고    scopus 로고
    • Ph.D. dissertation, Ph. D. dissertation, Universiteit Twente
    • G. Sasse, "Reliability engineering in RF CMOS," Ph.D. dissertation, Ph. D. dissertation, Universiteit Twente, 2008.
    • (2008) Reliability Engineering in RF CMOS
    • Sasse, G.1
  • 7
    • 77956302706 scopus 로고    scopus 로고
    • NBTI Model for Analog IC Reliability Simulation
    • E. Maricau et al, "NBTI Model for Analog IC Reliability Simulation," EL, 2010.
    • (2010) EL
    • Maricau, E.1
  • 8
    • 50249178553 scopus 로고    scopus 로고
    • An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications
    • -, "An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications," Microelectronics Reliability, 2008.
    • (2008) Microelectronics Reliability
    • Maricau, E.1
  • 9
    • 0036474952 scopus 로고    scopus 로고
    • A study of soft and hard breakdown-Part II: Principles of Area, Thickness and Voltage Scaling
    • M. Alam et al, "A study of soft and hard breakdown-Part II: Principles of Area, Thickness and Voltage Scaling," TED, 2002.
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    • Alam, M.1
  • 10
    • 27744511347 scopus 로고    scopus 로고
    • Power-law voltage acceleration: A key element for ultrathin gate oxide reliability
    • E. Wu et al, "Power-law voltage acceleration: A key element for ultrathin gate oxide reliability," Microelectronics Reliability, 2005.
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  • 11
    • 34548704303 scopus 로고    scopus 로고
    • Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs
    • J. Martín-Martínez et al, "Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs," Microelectronics Reliability, 2007.
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  • 13
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    • Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs
    • T. Grasser et al, "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs," TED, 2009.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.