-
1
-
-
49749094341
-
Emerging yield and reliability challenges in nanometer CMOS technologies
-
G. Gielen et al, "Emerging yield and reliability challenges in nanometer CMOS technologies," in DATE, 2008.
-
(2008)
DATE
-
-
Gielen, G.1
-
2
-
-
34548677068
-
Statistical analysis during the reliability simulation
-
C. Bestory et al, "Statistical analysis during the reliability simulation," Microelectronics Reliability, 2007.
-
(2007)
Microelectronics Reliability
-
-
Bestory, C.1
-
3
-
-
79957549645
-
Quasi-Linear Variability-Aware Reliability Simulation of Mixed-Signal ICs
-
E. Maricau et al, "Quasi-Linear Variability-Aware Reliability Simulation of Mixed-Signal ICs," in DATE, 2010.
-
(2010)
DATE
-
-
Maricau, E.1
-
4
-
-
0027678356
-
Berkeley reliability tools-BERT
-
R. Tu et al, "Berkeley reliability tools-BERT," TCAD, 1993.
-
(1993)
TCAD
-
-
Tu, R.1
-
5
-
-
77953091590
-
IC reliability simulator ARET and its application in design-for- reliability
-
X. Xuan et al, "IC reliability simulator ARET and its application in design-for-reliability," in ATS, 2003.
-
(2003)
ATS
-
-
Xuan, X.1
-
6
-
-
79957543537
-
-
Ph.D. dissertation, Ph. D. dissertation, Universiteit Twente
-
G. Sasse, "Reliability engineering in RF CMOS," Ph.D. dissertation, Ph. D. dissertation, Universiteit Twente, 2008.
-
(2008)
Reliability Engineering in RF CMOS
-
-
Sasse, G.1
-
7
-
-
77956302706
-
NBTI Model for Analog IC Reliability Simulation
-
E. Maricau et al, "NBTI Model for Analog IC Reliability Simulation," EL, 2010.
-
(2010)
EL
-
-
Maricau, E.1
-
8
-
-
50249178553
-
An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications
-
-, "An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications," Microelectronics Reliability, 2008.
-
(2008)
Microelectronics Reliability
-
-
Maricau, E.1
-
9
-
-
0036474952
-
A study of soft and hard breakdown-Part II: Principles of Area, Thickness and Voltage Scaling
-
M. Alam et al, "A study of soft and hard breakdown-Part II: Principles of Area, Thickness and Voltage Scaling," TED, 2002.
-
(2002)
TED
-
-
Alam, M.1
-
10
-
-
27744511347
-
Power-law voltage acceleration: A key element for ultrathin gate oxide reliability
-
E. Wu et al, "Power-law voltage acceleration: A key element for ultrathin gate oxide reliability," Microelectronics Reliability, 2005.
-
(2005)
Microelectronics Reliability
-
-
Wu, E.1
-
11
-
-
34548704303
-
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs
-
J. Martín-Martínez et al, "Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs," Microelectronics Reliability, 2007.
-
(2007)
Microelectronics Reliability
-
-
Martín-Martínez, J.1
-
13
-
-
67349231361
-
Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs
-
T. Grasser et al, "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs," TED, 2009.
-
(2009)
TED
-
-
Grasser, T.1
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