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Volumn 98, Issue 18, 2011, Pages

Green GaInN photonic-crystal light-emitting diodes with small surface recombination effect

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AIR HOLES; BLUE-EMITTING; CARRIER LOCALIZATION EFFECTS; EMISSION INTENSITY; ROOM TEMPERATURE; SURFACE RECOMBINATIONS; TWO-DIMENSIONAL PHOTONIC CRYSTALS;

EID: 79957531279     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3576927     Document Type: Article
Times cited : (22)

References (34)
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    • Effect of nonradiative recombination on light emitting properties of two-dimensional photonic crystal slab structures
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    • Photonic crystal effect on light emission from InGaNGaN multi-quantum-well structures
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    • The light output considered here is the total output and has not been normalized to the area of the remaining active layer
    • The light output considered here is the total output and has not been normalized to the area of the remaining active layer.
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    • This SRV is smaller than the value of 1.4× 103 cm/s estimated in Ref., which is most likely due to the difference in the excitation method used. Carrier trapping at defect states at the etched surface leads to carrier depletion due to Fermi-level pinning at the sidewalls of the air holes. As a result, a potential barrier for free carriers is formed (Ref.), leading to a reduction in the SR process for the current injection technique used in this study. On the other hand, the effect of the potential barrier in the photoluminesence measurement of Ref. should be smaller because the 377 nm photopumping that was used in that study leads to the generation of carriers with larger energy.
    • This SRV is smaller than the value of 1.4× 103 cm/s estimated in Ref., which is most likely due to the difference in the excitation method used. Carrier trapping at defect states at the etched surface leads to carrier depletion due to Fermi-level pinning at the sidewalls of the air holes. As a result, a potential barrier for free carriers is formed (Ref.), leading to a reduction in the SR process for the current injection technique used in this study. On the other hand, the effect of the potential barrier in the photoluminesence measurement of Ref. should be smaller because the 377 nm photopumping that was used in that study leads to the generation of carriers with larger energy.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.