Light emission from silicon in photonic crystal nanocavity

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1090-1097

  Fujita, Masayuki ^a   Tanaka, Yoshinori ^a   Noda, Susumu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Light emission; Light extraction; Photonic crystal; Photonic nanocavity; Silicon

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTALLOGRAPHY; EXTRACTION; LATTICE CONSTANTS; LIGHT; LIGHT EMISSION; NONMETALS; PHOTONICS; POINT DEFECTS; POWDERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ON INSULATOR TECHNOLOGY; WASTEWATER;

BRILLOUIN ZONE; CAVITY MODES; DEFECT-FREE; EMISSION PATTERNS; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; NANO CAVITIES; PHOTONIC BAND EDGE; PHOTONIC BANDS; PHOTONIC CRYSTAL; PHOTONIC NANOCAVITY; Q-FACTORS; RADIATION PATTERNS; RESONANT WAVELENGTHS; ROOM TEMPERATURES; SILICON-ON -INSULATOR; SINGLE-CRYSTAL-SILICON; WAVELENGTH OF LIGHT;

PHOTONIC CRYSTALS;

EID: 48949101024     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.918941     Document Type: Article

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