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Volumn 509, Issue 24, 2011, Pages 6924-6929
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Epitaxial PMN-PT thin films grown on buffered Si substrates using ceramic and single-crystal targets
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Author keywords
Ceramics target; Electrical properties; Epitaxial PMN PT thin films; Pulse laser deposition; Single crystal target
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Indexed keywords
ABSORPTION COEFFICIENTS;
CERAMIC TARGET;
CERAMICS TARGET;
CRYSTALLINITIES;
DIELECTRIC CONSTANTS;
ELECTRICAL PROPERTY;
EPITAXIAL PMN-PT THIN FILMS;
HIGH CRYSTALLINITY;
IN-PLANE LATTICES;
LOW DENSITY;
PMN-PT FILM;
POLARIZATION HYSTERESIS LOOPS;
PULSE LASER DEPOSITION;
REMNANT POLARIZATIONS;
SI SUBSTRATES;
SINGLE-CRYSTALLINE;
SINTERED CERAMICS;
CERAMIC MATERIALS;
DEPOSITION;
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
HYSTERESIS;
HYSTERESIS LOOPS;
LATTICE MISMATCH;
LEAD;
POLARIZATION;
PULSED LASER DEPOSITION;
PULSED LASERS;
SEMICONDUCTING SILICON COMPOUNDS;
SINGLE CRYSTALS;
SINTERING;
STOICHIOMETRY;
SUBSTRATES;
VAPOR DEPOSITION;
EPITAXIAL FILMS;
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EID: 79956221361
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2011.04.002 Document Type: Article |
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Times cited : (15)
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References (18)
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