Microstructural and electrical properties of 0.65Pb(Mg1/3Nb 2/3)O3-0.35PbTiO3 (PMN-PT) epitaxial films grown on Si substrates

Sensors and Actuators, B: Chemical

Volumn 155, Issue 2, 2011, Pages 854-858

  Jiang, Juan ^a   Hwang, Hyun Hee ^b   Lee, Won Jae ^c   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

^b Business Incubator Building ^*  (South Korea)

^c Dong Eui University   (South Korea)

Author keywords

CeO2 and YSZ buffered Si substrate; LSCO bottom electrode; PMN PT epitaxial films; Pulsed laser deposition

Indexed keywords

DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; EPITAXIALLY GROWN; FERROELECTRIC PROPERTY; LSCO BOTTOM ELECTRODE; MICRO-STRUCTURAL; PEROVSKITE STRUCTURES; PMN-PT EPITAXIAL FILMS; PMN-PT FILM; PMN-PT SINGLE CRYSTAL; PURE PEROVSKITE STRUCTURE; PYROCHLORE PHASE; SI SUBSTRATES;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROELECTRIC FILMS; LEAD; PEROVSKITE; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SINGLE CRYSTALS; SUBSTRATES;

EPITAXIAL FILMS;

EID: 79957805366     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2011.01.061     Document Type: Article

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