Preparation, microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 films on different epitaxial bottom electrodes buffered Si substrates

Journal of Crystal Growth

Volumn 310, Issue 3, 2008, Pages 575-578

  Wu, Feng ^a,b   Li, Xiaomin ^a   Yu, Weidong ^a   Gao, Xiangdong ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A3. Pulsed laser deposition (PLD); B1. Perovskite; B2. Dielectric materials; B2. Ferroelectric materials

Indexed keywords

ELECTRODES; FERROELECTRIC MATERIALS; MICROSTRUCTURE; PERMITTIVITY; PEROVSKITE; PULSED LASER DEPOSITION; SILICON;

EPITAXIAL BOTTOM; REMNANT POLARIZATION;

EPITAXIAL GROWTH;

EID: 37849043341     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.020     Document Type: Article

References (25)

1. Choi S.W., Shrout T.R., Jang S.J., and Bhalla A.S. Ferroelectrics 100 (1989) 29
2. Park S.E., and Shrout T.R. J. Appl. Phys. 82 (1997) 1804
3. Feng Z.Y., Zhao X., and Luo H. J. Appl. Phys. 100 (2006) 024104
4. Davis M., Damjanovic D., and Setter N. Phys. Rev. B 73 (2006) 014115
5. Tantigate C., Lee J., and Safari A. Appl. Phys. Lett. 66 (1995) 1611
6. Wang J., Wong K.H., Chan H.L.W., and Choy C.L. Appl. Phys. A 79 (2003) 551
7. Lu Y. Appl. Phys. Lett. 85 (2004) 979
8. Bai G.R., Streiffer S.K., Baumann P.K., Auciello O., and Ghosh K. Appl. Phys. Lett. 76 (2000) 3106
9. Bu S.D., Lee M.K., and Eom C.B. Appl. Phys. Lett. 79 (2001) 3482
10. Tantigate C., and Safari A. Microelectron. Eng. 29 (1995) 115
11. Nakamura T., Masuda A., Morimoto A., and Shimizu T. Jpn. J. Appl. Phys. 35 (1996) 4750
12. Wakiya N., Shinozaki K., and Mizutani N. Thin Solid Films 409 (2002) 248
13. Liu AY., Meng X.J., Xue J.Q., Chen J.L., and Chu J.H. Appl. Phys. Lett. 87 (2005) 072903
14. Nakamura T., Nakao Y., Kamisawa A., and Takasu H. Appl. Phys. Lett. 65 (1994) 1522
15. Lee K.B., Tirumala S., and Desu S.B. Appl. Phys. Lett. 74 (1999) 1484
16. Wang G.S., Meng X.J., Sun J.L., Lai Z.Q., Yu J., Guo S.L., Cheng J.G., Tang J., and Chu J.H. Appl. Phys. Lett. 79 (2001) 3476
17. Zhu X., Chan H.L.-w., Choy C.-L., Wong K., and Hesse D. J. Appl. Phys. 97 (2005) 093503
18. Chen T., Li X., and Zhang X. J. Crystal Growth 267 (2004) 80
19. Chen T.L., Li X.M., Wu W.B., Yu W.D., Gao X.D., and Zhang X. Appl. Phys. Lett. 86 (2005) 132902
20. Chen T.L., Li X.M., Zhang S., and Zhang X. Appl. Phys. A. 80 (2005) 73
21. F. Wu, X.M. Li, W.D. Yu, J. Crystal Growth, in press.
22. Arlt G., Hennings D., and de With G. J. Appl. Phys. 58 4 (1985) 1619
23. Kumazawa T., Kumagai Y., Miura H., Kitano M., and Kushida K. Appl. Phys. Lett. 72 (1998) 608
24. Yao K., Yu S., and Tay F.E.H. Appl. Phys. Lett. 82 (2003) 4540
25. Speck J.S., Seifert A., Pompe W., and Ramesh R. J. Appl. Phys. 76 (1994) 477