THz generation from a nanocrystalline silicon-based photoconductive device

Semiconductor Science and Technology

Volumn 26, Issue 7, 2011, Pages

  Daghestani, N S ^a   Persheyev, S ^a   Cataluna, M A ^a   Ross, G ^b   Rose, M J ^a  

^a UNIVERSITY OF DUNDEE   (United Kingdom)

^b NCR FSG Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; FEMTO-SECOND LASER; HOT WIRES; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); NANOCRYSTALLINES; NC-SI:H; PHOTOCONDUCTIVE DEVICES; PHOTOCONDUCTIVE SWITCHES; PRODUCTION COST; SILICON-BASED; TERAHERTZ GENERATION; THZ GENERATION; ULTRAFAST CARRIER DYNAMICS;

CHEMICAL VAPOR DEPOSITION; MANUFACTURE; PHOTOCONDUCTIVITY;

NANOCRYSTALLINE SILICON;

EID: 79956218523     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/7/075015     Document Type: Article

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