Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 130-133

  Persheyev, S K ^a   Goldie, D M ^a   Gibson, R A G ^a   Rose, M J ^a   Anthony, S ^a   Keeble, D J ^a   Robb, K ^a   Main, C ^b   Reynolds, S ^b   Zrinscak, I ^b  

^a UNIVERSITY OF DUNDEE   (United Kingdom)

^b UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

Author keywords

Conductivity results; Fundamental absorption data; Infrared spectroscopic data; Transient photoconductivity measurements

Indexed keywords

AMORPHOUS SILICON; CARBON; ELECTRONIC PROPERTIES; ETCHING; FILM GROWTH; FREE RADICALS; HYDROGENATION; OXYGEN; PHOTOCONDUCTIVITY; PHOTODISSOCIATION; PROFILOMETRY; SURFACE ROUGHNESS;

DEPTH PROFILING;

THIN FILMS;

EID: 0035800984     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01233-0     Document Type: Conference Paper

References (4)