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Journal of Materials Science: Materials in Electronics

Volumn 18, Issue SUPPL. 1, 2007, Pages 447-452

Ultrafast terahertz conductivity of photoexcited nanocrystalline silicon

(7) Cooke, David G a,b MacDonald, A Nicole a Hryciw, Aaron a Meldrum, Al a Wang, Juan c Li, Quan c Hegmann, Frank A a

a UNIVERSITY OF ALBERTA (Canada)

b TECHNICAL UNIVERSITY OF DENMARK (Denmark)

c CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL INJECTION; SILICON NANOCRYSTAL FILM; ULTRAFAST TERAHERTZ CONDUCTIVITY;

GLASS; MATHEMATICAL MODELS; METAL INSULATOR TRANSITION; PARTICLE SIZE; PASSIVATION; PHOTOCONDUCTIVITY; PHOTOEXCITATION;

NANOCRYSTALLINE SILICON;

EID: 34547559302 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-006-9042-2 Document Type: Conference Paper

Times cited : (28)

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