Frequency limits of InP-based integrated circuits

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 9-13

  Rodwell, Mark ^a   Lind, E ^a   Griffith, Z ^a   Bank, S R ^b   Crook, A M ^a   Singisetti, U ^a   Wistey, M ^a   Burek, G ^a   Gossard, A C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; HEAT RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM PHOSPHIDE; MOSFET DEVICES; NATURAL FREQUENCIES;

BASE CONTACT; FREQUENCY LIMITS;

DIGITAL INTEGRATED CIRCUITS;

EID: 34748835219     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.380676     Document Type: Conference Paper

References (25)

1. S. Lee, L. Wagner, B. Jaganathan, S. Csutak, J. Pekarik, N. Zamdmer, M. Breitwisch, R. Ramachandran, G. Freeman," Record RF Performance of Sub-46nm Lgate NFETs in Microprocessor SOI CMOS Technologies", 2006 International Electron Device Meeting, December 11-13, San Francisco.
2. http://www.intel.com/pressroom/archive/releases/20060125comp.htm
3. A. -J. Amiema, B. Nauta, R. van Langevelde, H. Tuinhout, "Analog circuits in ultra-deep-submicron CMOS", IEEE Journal of Solid-State Circuits, Volume: 40, Issue: 1, Jan. 2005, pp. 132-143
4. M. Fischetti and S. Laux, "Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures - Part II: Submicrometer MOSFETs," IEEE Trans. Electron Devices 38, 650-660 (1991).
5. S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. J. Phillips, D. Wallis, P. Wilding and R. Chau: "85nm Gate Length Enhancement and Depletion mode InSb Quantum Well Transistors for Ultra High Speed and Very Low Power Digital Logic Applications", 2005 International Electron Devices Meeting, 5-7 Dec., Washington, DC.
6. 2 gate dielectrics" 2006 Device Research Conference, June, State College, PA, Page(s):49-50
7. J. Del Alamo, this conference.
8. Z. Griffith el al, this conference.
9. T.H. Ning, D.D. Tang, P. M. Solomon, "Scaling properties of bipolar devices ", 1980 IEEE International Electron Devices Meeting, Volume 26, Page(s):61-64
10. M. J. W. Rodwell, M. Urteaga, T. Mathew, D. Scott, D. Mensa, Q. Lee, J. Guthrie, Y. Betser, S. C. Martin, R. P. Smith, S. Jaganathan, S. Krishnan, S. I. Long, R. Pullela, B. Agarwal, U. Bhattacharya, L. Samoska, and M. Dahlström, "Submicron scaling of HBTs," IEEE Trans. Electron Devices, vol. 48, no. 11, pp. 2606-2624, Nov. 2001.
11. Mark Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S. R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, P. Rowell, "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and NextGeneration (300 GHz) Digital Circuits" IEEE Device Research Conference, June 2006, State College PA.
12. J. S. Kofol, B.J.F. Lin, M. Mierzwinski, A. Kim, A. Armstrong, R. Van Tuyl, "A backside via process for thermal resistance improvement demonstrated using GaAs HBTs" Technical Digest 1992 Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992, 4-7 Oct, pages 267-270
13. Hien Ha, F. Brewer, "Power and signal integrity improvement in ultra high-speed current mode logic" Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, Volume 1, Issue , July, Page(s):525-528
14. E. F. Chor, D. Zhang, H. Gong, W. K. Chong, S. Y. Ong, "Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based Ohmic contacts". Journal of Applied Physics, vol.87, (no.5), AIP, 1 March 2000. p.2437-44.
15. E. Lind, Z. Griffith, M.J.W. Rodwell, "250 nm InGaAs/InP DHBTs with 650 GHz fmax and 420 GHz ft, operating above 30 mW/μm2" 2006 IEEE Device Research Conference, Penn State University, PA, June 26-28
16. Z. Griffith, E. Lind, M. Rodwell, X. Fang, D. Loubychev Y. Wu, J. Fastenau, A. Liu "60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz ft, BVceo = 2.5V, and BVcbo = 2.7 V", 2006 IEEE Compound Semiconductor IC Symposium, Nov. 12-15, San Antonio, Texas
17. U. Singisetti, A. M. Crook, S.R. Bank, E. Lind, J. D. Zimmerman, M. A. Wistey, A. C. Gossard, and M. J. M. Rodwell, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP", submitted to the 2007 IEEE Device Research Conference.
18. H.-S. P. Wong, "Beyond the conventional transistor", IBM J. Res. & Dev. Vol. 46 No. 2/3 March/May 2002, pp. 133-168.
19. L.D. Nguyen, L.M. Jelloian, M. Thompson, M. Lui, "Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMT" 1990 International Electron Devices Meeting, 9-12 Dec., Technical Digest Page(s):499-502
20. t, IEEE Transactions on Electron Devices, Volume 54, Issue 3, March 2007 Page(s):378-384
21. t > 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate", this conference.
22. R.H. Dennard, F.H. Gaensslen, Hwa-Nien Yu; V.L. Rideout, E. Bassous, A.R. Leblanc, "Design Of Ion-implanted MOSFETapos;s with Very Small Physical Dimensions" Proceedings of the IEEE Volume 87, Issue 4, Apr 1999 Page(s):668-678
23. R. Feynman, R. Leighton, M. Sands, The Feynman Lectures on Physics, Volume II, chapter 6, Addison-Wesley, Reading, Mass, 1964, ISBM 0-201-51004-9.
24. P. M. Solomon, S. E. Laux, "The ballistic FET: design, capacitance and speed limit" 2001 IEEE International Electron Devices Meeting, 2-5 Dec, Technical Digest, pp. 5.1.1-5.1.4
25. T. Noda, M. Tanaka, H. Sakaki "Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement", Applied Physics Letters -October 15, 1990 - Volume 57, Issue 16, pp. 1651-1653