Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga 2O3(Gd2O3)/In0.75Ga 0.25As MOSFET

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 518-521

  Lin, T D ^a   Chang, P ^a   Wu, Y D ^a   Chiu, H C ^a   Kwo, J ^a,b   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Dielectric materials; Field effect transistors; Molecular beam epitaxy; Semiconducting indium gallium arsenide

Indexed keywords

CHANNEL MATERIALS; DEVICE CONFIGURATIONS; ENHANCEMENT MODES; FIELD-EFFECT; MAXIMUM DRAIN CURRENT; METAL GATE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; PEAK TRANSCONDUCTANCE; SELF-ALIGNED;

DIELECTRIC MATERIALS; ELECTRON MOBILITY; EPITAXIAL GROWTH; GADOLINIUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOSFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TITANIUM NITRIDE; TRANSISTORS;

DRAIN CURRENT;

EID: 79958005257     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.079     Document Type: Article

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