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Volumn 13, Issue 3, 2002, Pages 294-298
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The effect of quantum confinement and discrete dopants in nanoscale 50 nm n-MOSFETs: A three-dimensional simulation
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Author keywords
[No Author keywords available]
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Indexed keywords
IMPURITIES;
INTERFACES (MATERIALS);
MOSFET DEVICES;
QUANTUM THEORY;
SEMICONDUCTOR DOPING;
SILICON;
THRESHOLD VOLTAGE;
TRANSPORT PROPERTIES;
QUANTUM CONFINEMENT;
NANOTECHNOLOGY;
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EID: 0036609079
PISSN: 09574484
EISSN: None
Source Type: Journal
DOI: 10.1088/0957-4484/13/3/311 Document Type: Conference Paper |
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Times cited : (17)
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References (13)
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