Increase of parasitic resistance of p-MOSFETs due to nitrogen atoms incorporation into silicon substrate by N2O-oxynitride gate dielectrics process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 235-238

  Takayanagi Takagi, Mariko ^a   Yoshimura, Hisao ^a   Toyoshima, Yoshiaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXYNITRIDE GATE DIELECTRICS PROCESS;

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0042997116     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)