Nitride laser diodes with InGaN based MQW structures

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 1157-1167

  Sugiura, Lisa ^a   Nishio, Johji ^a   Onomura, Masaaki ^a   Nunoue, Shin ya ^a   Itaya, Kazuhiko ^a   Ishikawa, Masayuki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

BANDGAP ENERGY; INNER STRIPE LASER DIODES;

QUANTUM WELL LASERS;

EID: 0031370007     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-1157     Document Type: Conference Paper

References (24)