Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates

Synthetic Metals

Volumn 90, Issue 3, 1997, Pages 229-232

  Benamara, Z ^a   Tizi, S ^a   Chellali, M ^a   Gruzza, B ^b   Bideux, L ^b   Robert, C ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Alumina layers; Electrical characterization; InP substrates; MIS structures

Indexed keywords

ALUMINA; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DEPOSITION; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); PHOSPHORUS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

BUFFER LAYERS; CAPACITANCE VOLTAGE CHARACTERISTICS; DANGLING BONDS; INDIUM ANTIMONIDE;

MIS DEVICES;

EID: 0031273040     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(98)80011-8     Document Type: Article

References (6)

1. L. Bideux, B. Gruzza and A. Porte, Surface Interface Anal., 20 (1993) 803-807.
2. G. Hollinger, J. Appl. Phys., 67 (1990) 4173.
3. B. Gruzza, B. Achard and C. Pariset, Surf. Sci., 162 (1995) 202.
4. B. Gruzza, B. Achard and C. Pariset, J. Phys. D: Appl. Phys., 19 (1986) 137.
5. L.M. Terman, Solid State Electron., 5 (1962) 285.
6. Z. Benamara and B. Gruzza, Vacuum, 46 (1995) 477.