GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP:Fe regrowth

Electrochemical and Solid-State Letters

Volumn 3, Issue 9, 2000, Pages 439-441

  Barrios, C Angulo ^a   Messmer, E Rodríguez ^a   Holmgren, M ^b   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Spectra Precision AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ETCHING; HETEROJUNCTIONS; LEAKAGE CURRENTS; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

ALUMINUM GALLIUM ARSENIDE; GALLIUM INDIUM PHOSPHIDE; HYDRIDE VAPOR PHASE EPITAXY; WET ETCHING;

SEMICONDUCTOR LASERS;

EID: 0034275894     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391173     Document Type: Article

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