Structure and stability of thin praseodymium oxide layers on Si(001)

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 783-788

  Mussig H J ^a   Dabrowski, J ^a   Ignatovich, K ^a   Liu, J P ^a   Zavodinsky, V ^a   Osten, H J ^a  

^a GOETHE UNIVERSITY   (Germany)

Author keywords

Ab initio simulations; AES; Heteroepitaxial growth; High K gate material; Initial stages; STM; XPS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPUTER SIMULATION; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; STRUCTURE (COMPOSITION); THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE MISMATCH; FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS; HETEROEPITAXIAL GROWTH; PRASEODYMIUM OXIDE;

PRASEODYMIUM COMPOUNDS;

EID: 17444443121     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (11)