X-ray diffraction, micro-Raman and birefringence imaging of silicon carbide

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 283-286

  Pernot, E ^a   Mermoux, M ^b   Kreisel, J ^c   Chaix Pluchery, O ^a   Pernot Rejmankova P ^a,d   Anikin, M ^a   Pelissier, B ^a   Glazer, A M ^c   Madar, R ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b LEPMI   (France)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; LIGHT POLARIZATION; OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; STRESS ANALYSIS; X RAY DIFFRACTION ANALYSIS;

BIREFRINGENCE IMAGING; REFLECTION X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 4244087178     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.283     Document Type: Article

References (6)

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