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Volumn 264-268, Issue PART 1, 1998, Pages 33-36

Physical vapor growth and characterization of high conductivity 1.4 inch 4H-SiC bulk crystals

Author keywords

Dislocation; Dopant Incorporation; Etch Pit Density; Micropipe; Stress Birefringence

Indexed keywords

BIREFRINGENCE; COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; NITROGEN; SEMICONDUCTOR DOPING; SILICON CARBIDE; THERMAL EFFECTS; THERMAL GRADIENTS; VOLTAGE MEASUREMENT;

EID: 3743096016     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (14)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.