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Volumn 264-268, Issue PART 1, 1998, Pages 33-36
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Physical vapor growth and characterization of high conductivity 1.4 inch 4H-SiC bulk crystals
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Author keywords
Dislocation; Dopant Incorporation; Etch Pit Density; Micropipe; Stress Birefringence
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Indexed keywords
BIREFRINGENCE;
COMPUTER SIMULATION;
CRYSTAL GROWTH;
DISLOCATIONS (CRYSTALS);
ELECTRIC CONDUCTIVITY OF SOLIDS;
ELECTRIC CURRENT MEASUREMENT;
NITROGEN;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
THERMAL EFFECTS;
THERMAL GRADIENTS;
VOLTAGE MEASUREMENT;
MICROPIPES;
MODIFIED LELY METHOD (MLM);
PHYSICAL VAPOR TRANSPORT (PVT);
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 3743096016
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Article |
Times cited : (14)
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References (11)
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