Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 221-224

  Yamaguchi, H ^a   Nishizawa, S ^a   Bahng, W ^a   Fukuda, K ^a   Yoshida, S ^a,b   Arai, K ^a   Takano, Y ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Dislocation; Hollow core; SiC; X ray topography

Indexed keywords

BURGERS VECTOR; X RAY TOPOGRAPHY;

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTROMAGNETIC WAVE REFLECTION; ELECTROMAGNETIC WAVE TRANSMISSION; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; VECTORS; X RAY ANALYSIS;

SILICON CARBIDE;

EID: 0032642676     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00506-6     Document Type: Article

References (3)

1. Kohra K., Takano Y. Jpn. J. Appl. Phys. 7:1968;982.
2. Krishna P., Jiang S.-S., Lang A.R. J. Cryst. Growth. 71:1985;41.
3. Dudley M., Wang S., Huang W., Carter C.H. Jr., Tsvetkov V.F., Fazi C. J. Phys. D: Appl. Phys. 28:1995;63.