Defects analysis in single crystalline 6H-SiC at different PVT growth stages

Materials Science and Engineering: B

Volumn 83, Issue 1-3, 2001, Pages 8-12

  Wang, Shizhong ^a,b   He, Jibao ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Defect formation; Grain boundary; Nucleation; Silicon carbide

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ETCHING; GRAIN BOUNDARIES; NUCLEATION; OPTICAL MICROSCOPY; POTASSIUM COMPOUNDS; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

FULL WIDTHS AT HALF MAXIMUM (FWHM); PHYSICAL VAPOR TRANSPORT (PVT) METHOD; POTASSIUM HYDROXIDE; X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 0035928003     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00550-X     Document Type: Article

References (15)