Characterization of polarity of plasma-assisted molecular beam epitaxial GaN{0001} film using coaxial impact collision ion scattering spectroscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 2 A, 2000, Pages

  Kawano, Takashi ^a   Takai, Yoshizo ^a   Shimizu, Ryuichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; NITRIDING; NITROGEN; PLASMA APPLICATIONS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY (CAICISS); GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0342758563     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l73     Document Type: Article

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