Radiation effects of focused ion beam microfabrication on Ni disilicide thin films by in situ transmission electron microscopy

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 961-963

  Tanaka, Miyoko ^a   Furuya, Kazuo ^a   Saito, Tetsuya ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; EPITAXIAL GROWTH; GALLIUM; ION BEAM LITHOGRAPHY; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; MORPHOLOGY; NITROGEN COMPOUNDS; RADIATION EFFECTS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EXFOLIATION; FOCUSED ION BEAM LITHOGRAPHY; FRAGMENTATION; MICROFABRICATION; NITROGEN DISILICIDE;

THIN FILMS;

EID: 0030083717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116112     Document Type: Article

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