Formation of GaAs/AIGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized states

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2547-2550

  Kim, H ^a   Noda, T ^a   Sakaki, H ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040624022     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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