As antisite incorporation in epitaxial growth of GaAs

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 725-728

  Bourgoin, J C ^a   Hammadi, H ^a   Stellmacher, M ^b   Nagle, J ^b   Grandidier, B ^c   Stievenard, D ^c   Nys, J P ^c   Delerue, C ^c   Lannoo, M ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b THALES   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH;

ARSENIC ANTISITE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033323457     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00622-5     Document Type: Article

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