Sub-45nm resist process using stacked-mask process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Seino, Yuriko ^a   Kobayashi, Katsutoshi ^a   Sho, Koutaro ^a   Kato, Hirokazu ^a   Miyoshi, Seiro ^a   Kikutani, Keisuke ^a   Abe, Junko ^a   Hayashi, Hisataka ^a   Ohiwa, Tokuhisa ^a   Oonishi, Yasunobu ^a   Ito, Shinichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLARIFICATION; DEFORMATION; DRY ETCHING; ETCHING; FLUORINE; HYDROGEN; MAPS; PLASMA ETCHING; PROGRAMMABLE LOGIC CONTROLLERS; REFLECTION; SILICON COMPOUNDS; SPIN GLASS;

DESIGN RULES; DEVICE FABRICATIONS; HIGH REFLECTIVITIES; HIGH-NA; HYDROGEN CONTENTS; INNER STRESSES; LINE PATTERNS; MASK PROCESSES; PATTERN DEFORMATIONS; REACTIVE IONS; RESIST PROCESSES; SPIN-ON; VOLUME EXPANSIONS;

REACTIVE ION ETCHING;

EID: 45449107160     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771840     Document Type: Conference Paper

References (7)

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