Silicon D-band wireless transceivers and applications

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn , Issue , 2010, Pages 1857-1864

  Voinigescu, S P ^a   Laskin, E ^a   Sarkas, I ^a   Yau, K H K ^a   Shahramian, S ^a   Hart, A ^a   Tomkins, A ^a   Chevalier, P ^b   Hasch, J ^c   Garcia, P ^b   Chantre, A ^b   Sautreuil, B ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (France)

^c ROBERT BOSCH GMBH   (Germany)

Author keywords

chip to chip communication; D band; nanoscale CMOS; on die antenna; radio transceivers; SiGe HBT

Indexed keywords

CHIP-TO-CHIP COMMUNICATIONS; D-BAND; NANOSCALE CMOS; ON-DIE ANTENNA; RADIO TRANSCEIVERS; SIGE HBTS;

ANTENNAS; DIES; NANOSTRUCTURED MATERIALS; RADIO RECEIVERS; SILICON ALLOYS;

TRANSCEIVERS;

EID: 79955739863     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)

1. E. Laskin et al., "80-GHz/160-GHz transceiver in SiGe HBT technology," 2007 IEEE RFIC Dig., pp. 153-156, June 2007. (Pubitemid 47486641)
2. E. Laskin et al., "A 165-GHz transceiver in SiGe BiCMOS technology," IEEE JSSC, vol. 43, pp. 1087-1100, May 2008. (Pubitemid 351596340)
3. S. Nicolson et al., "A 1.2V 140 GHz receiver with on-die antenna in 65nm CMOS," 2008 IEEE RFIC Dig., pp. 229-233, June 2008.
4. K. Schmalz et al., "A 122 GHz receiver in SiGe technology," 2009 IEEE BCTM Dig., pp. 182-185, October 2009.
5. E. Laskin et al., "A 40 GHz double-sideband transceiver with amplitude and frequency modulation," 2009 IEEE BCTM Dig., pp. 178-181, October 2009.
6. U.R. Pfeiffer et al., "A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160 GHz," 2010 IEEE ISSCC Dig., pp. 416-417, February 2010.
7. M. Jahn et al., "Highly integrated 79, 94, and 120-GHz SiGe radar frontends," 2010 IEEE IMS Dig., pp. 1324-1327, May 2010.
8. I. Sarkas et al., "Second generation transceivers for D-band radar and data communication applications," 2010 IEEE IMS Dig., pp. 1328-1331, May 2010.
9. S. Sarkaran et al., "Towards terahertz operation in CMOS," 2009 IEEE ISSCC Dig., pp. 202-203, February 2009.
10. E. Ojefors et al., "A 325 GHz Frequency multiplier chain in a SiGe HBT technology," 2010 IEEE RFIC Dig., pp. 91-94, May 2010.
11. U.R. Pfeiffer et al., "A CMOS focal-plane array for heterodyne terahertz imaging," 2009 IEEE RFIC Dig., pp. 437-440, May 2009.
12. E. Ojefors and U. R. Pfeiffer, "A 650GHz SiGe receiver front-end for terahertz imaging arrays," 2010 IEEE ISSCC Dig., vol. 1, pp. 430-431, February 2009.
13. T. Kosugi et al., "120-GHz Tx/Rx waveguide modules for 10- Gbit/s wireless link system," 2006 IEEE CSICS Dig., pp. 25-28, October 2006.
14. J. Hasch et al., "77 GHz radar transceiver with integrated dual antenna elements," 2010 GeMIC Dig., March 2010.
15. Y. A. Atesal et al., "Wafer-scale W-Band power amplifiers using on-chip antennas," 2010 IEEE RFIC Dig., pp. 469-4723, May 2010.
16. E. Laskin et al., "Nanoscale CMOS transceiver design in the 90-170-GHz range," IEEE Trans. MTT., vol. 57, pp. 3477-3490, December 2009.
17. A. Tomkins et al., "A Passive W-Band Imager in 65nm Bulk CMOS," 2009 IEEE CSICS Dig., pp. 91-94, October 2009.
18. I. Sarkas et al., "An 18-Gb/s, direct QPSK modulation, SiGe BiCMOS transceiver for last mile links in the 70-80 GHz Band," JSSC, vol. 45, pp. 1968-1980, October 2010.
19. H. Takahashi et al., "10-Gbit/s QPSK modulator and demodulator for a 120-GHz-band wireless link," 2010 IEEE IMS Dig., pp. 632-635, May 2010.
20. K.H.K. Yau et al., "On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz," 2010 IEEE IMS Dig., pp. 600-603, May 2010.
21. Workshop WFC on "Millimeter-Wave SiGe/CMOS and III-V Chips and Imaging Systems," IEEE IMS 2010, May 2010.
22. M. Seo et al., "A 1.1V 150GHz amplifier with Passive Imaging Receiver with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy pre-filled microstrip lines," 2009 IEEE ISSCC Dig., pp. 484-485, February 2009.
23. S. Shahramian et al., "A D-band PLL covering the 81-82 GHz, 86-92 GHz and 162-164 GHz bands," 2010 IEEE RFIC Dig., pp. 53-57, May 2010.
24. G. Avenier et al., "A 0.13μm SiGe BiCMOS technology for mm-wave applications," IEEE JSSC, vol. 44, pp. 2312-2321, September 2009.
25. H. Knapp et al., "Static frequency dividers up to 125 GHz in SiGe:C Bipolar Technology," 2010 IEEE BCTM Dig., in print October 2010.