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Volumn , Issue , 2010, Pages 91-94

A 325 GHz frequency multiplier chain in a SiGe HBT technology

Author keywords

Frequency conversion; Heterojunction bipolar transistors; Millimeter wave integrated circuits; Power amplifiers; Silicon; Submillimeter wave generation

Indexed keywords

DOUBLERS; FREQUENCY CONVERSION; FREQUENCY CONVERSIONS; FREQUENCY MULTIPLIER; GHZ FREQUENCIES; INPUT SIGNAL; MILLIMETER-WAVE INTEGRATED CIRCUITS; PEAK OUTPUT POWER; SIGE-HBT TECHNOLOGY; SINGLE-CHIP; SUBMILLIMETER WAVE GENERATION;

EID: 77954461600     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2010.5477301     Document Type: Conference Paper
Times cited : (28)

References (13)
  • 1
    • 0036500775 scopus 로고    scopus 로고
    • Terahertz technology
    • March
    • P. H. Siegel, "Terahertz technology," IEEE Trans. Microw. Theory Tech., vol. 50, no. 3, pp. 910-928, March 2002.
    • (2002) IEEE Trans. Microw. Theory Tech. , vol.50 , Issue.3 , pp. 910-928
    • Siegel, P.H.1
  • 8
    • 77952206111 scopus 로고    scopus 로고
    • A 650GHz SiGe receiver front-end for terahertz imaging arrays
    • February
    • E. Öjefors and U. R. Pfeiffer, "A 650GHz SiGe receiver front-end for terahertz imaging arrays," in IEEE Intl. Solid-State Circuits Conf., February 2010, pp. 430-431.
    • (2010) IEEE Intl. Solid-state Circuits Conf. , pp. 430-431
    • Öjefors, E.1    Pfeiffer, U.R.2
  • 9
    • 34748914327 scopus 로고    scopus 로고
    • A SiGe monolithi-cally integrated 278 GHz push-push oscillator
    • June
    • R. Wanner, R. Lachner, G. Olbrich, and P. Russer, "A SiGe monolithi-cally integrated 278 GHz push-push oscillator," in IEEE Intl. Microwave Symp., June 2007, pp. 333-336.
    • (2007) IEEE Intl. Microwave Symp. , pp. 333-336
    • Wanner, R.1    Lachner, R.2    Olbrich, G.3    Russer, P.4
  • 12
    • 34247236651 scopus 로고    scopus 로고
    • High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches
    • B. Heinemann, R. Barth, D. Knoll, H. Rücker, B. Tillack, and W. Winkler, "High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches," Semicond. Sci. Technol., vol. 22, pp. 153-157, 2007.
    • (2007) Semicond. Sci. Technol. , vol.22 , pp. 153-157
    • Heinemann, B.1    Barth, R.2    Knoll, D.3    Rücker, H.4    Tillack, B.5    Winkler, W.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.