A 1.1V 150GHz amplifier with 8dB Gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2009, Pages 484-485

  Seo, Munkyo ^a   Jagannathan, Basanth ^b   Carta, Corrado ^a   Pekarik, John ^c   Chen, Luis ^a   Yue, C Patrick ^a   Rodwell, Mark ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM   (United States)

^c IBM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70349300532     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2009.4977519     Document Type: Conference Paper

References (8)

1. E. Laskin, et al., "170-GHz Transceiver with On-Chip Antennas in SiGe Technology," IEEE Radio Frequency Integrated Circuits Symp., pp. 637-640, July 2008.
2. S. T. Nicolson, et al., "A 1.2V, 140GHz Receiver with On-Die Antenna in 65nm CMOS," IEEE Radio Frequency Integrated Circuits Symp., pp. 229-232, July 2008.
3. E. Laskin, et al., "80/160-GHz Transceiver and 140-GHz Amplifier in SiGe Technology," IEEE Radio Frequency Integrated Circuits Symp., pp. 153-156, July 2007.
4. B. Heydari, et al., "Low-Power mm-Wave Components up to 104GHz in 90nm CMOS," ISSCC Dig. Tech. Papers, pp. 200-201, Feb. 2007.
5. Y.-S. Jiang, et al., "A 86 to 108 GHz Amplifier in 90 nm CMOS," IEEE Microwave and Wireless Components Letters, pp. 124-126, Feb. 2008.
6. E. Laskin, et al., "A 95GHz Receiver with Fundamental-Frequency VCO and Static Frequency Divider in 65nm Digital CMOS," ISSCC Dig. Tech. Papers, pp. 180-181, Feb. 2008.
7. M. Khanpour, et al., "A Wideband W-Band Receiver Front-End in 65nm CMOS," IEEE J. Solid-State Circuits, vol.43, pp. 1717-1730, Aug. 2008.
8. T. Suzuki, et al., "60 and 77GHz Power Amplifiers in Standard 90nm CMOS," ISSCC Dig. Tech. Papers, pp. 562-563, Feb. 2008.