Reexamination of SRAM cell write margin definitions in view of predicting the distribution

IEEE Transactions on Circuits and Systems II: Express Briefs

Volumn 58, Issue 4, 2011, Pages 230-234

  Makino, Hiroshi ^a   Nakata, Shunji ^b   Suzuki, Hirotsugu ^c   Mutoh, Shin'Ichiro ^b   Miyama, Masayuki ^c   Yoshimura, Tsutomu ^a   Iwade, Shuhei ^a   Matsuda, Yoshio ^c  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

^b NTT CORPORATION   (Japan)

^c KANAZAWA UNIVERSITY   (Japan)

Author keywords

Static random access memory (SRAM); variance; Vth fluctuation; WM distribution; write margin (WM)

Indexed keywords

MONTE CARLO METHODS; NORMAL DISTRIBUTION; THRESHOLD VOLTAGE;

STATIC RANDOM ACCESS MEMORY; VARIANCE; VTH FLUCTUATION; WM DISTRIBUTION; WRITE MARGIN;

STATIC RANDOM ACCESS STORAGE;

EID: 79955594321     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2011.2124531     Document Type: Article

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