The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2010, Pages 301-304

  Mohamad, Mazuina ^a   Mustafa, Farahiyah ^a   Abidin, Mastura Shafinaz Zainal ^a   Rahman, Shaharin Fadzli Abd ^a   Al Obaidi, Nihad K Ali ^a   Hashim, Abdul Manaf ^a   Aziz, Azlan Abdul ^b   Hashim, Md Roslan ^b  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; AVERAGE CURRENTS; ELECTRON BEAM EVAPORATION; FORWARD BIAS; HIGH ELECTRON MOBILITY; HYDROGEN GAS; HYDROGEN GAS SENSORS; REVERSE CURRENTS; ROOM TEMPERATURE; SCHOTTKY DIODES; SENSING PERFORMANCE; TRANSIENT CHARACTERISTIC;

ELECTRON BEAMS; GALLIUM NITRIDE; HYDROGEN; PLATINUM; SCHOTTKY BARRIER DIODES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957556203     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2010.5549369     Document Type: Conference Paper

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