Ti-based nonalloyed Ohmic contacts for Al0.15 Ga0.85 N/GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Seo, Hui Chan ^a   Chapman, Patrick ^a   Cho, Hyun Ick ^b   Lee, Jung Hee ^b   Kim, Kyekyoon ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

OHMIC CONTACTS;

EID: 51749108850     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2979702     Document Type: Article

References (13)

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