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Volumn 96, Issue 19, 2010, Pages

Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

(3) Chen, Z T a Sakai, Y a Egawa, T a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITON LUMINESCENCE; HIGH ENERGY; HIGH QUALITY; LATTICE-MATCHED; LOW ENERGIES; METALORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ALLOY; SURFACE EFFECT; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; TWO-COMPONENT;

GALLIUM ALLOYS; LAGRANGE MULTIPLIERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; SURFACE STRUCTURE;

GALLIUM NITRIDE;

EID: 77953017408 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3430737 Document Type: Article

Times cited : (13)

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