25-nm gate length nMOSFET with steep channel profiles utilizing carbon-doped silicon layers (A P-type dopant confinement layer)

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1302-1310

  Hokazono, Akira ^a   Itokawa, Hiroshi ^a   Kusunoki, Naoki ^a   Mizushima, Ichiro ^a   Inaba, Satoshi ^a   Kawanaka, Shigeru ^a   Toyoshima, Yoshiaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Carbon doped Si (Si:C); epitaxial layers (epi layer); mobility; random dopant fluctuation; steep channel profile

Indexed keywords

A-CARBON; CHANNEL PROFILE; CHANNEL STRUCTURES; DIFFUSIVITIES; DOPED SILICON; GATE LENGTH; MOBILITY; MOSFETS; N-CHANNEL; NMOSFET; NMOSFETS; P-TYPE; P-TYPE DOPANT; RANDOM DOPANT FLUCTUATION; SI LAYER; STEEP CHANNEL PROFILE;

BORON; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955525576     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2112770     Document Type: Article

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