Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of mosfet's with carbon-implanted channels

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1544-1551

  Ban, Ibrahim ^a,b   Öztürk, Mehmet C ^a   Demirlioglu, Esin Kutlu ^a  

^a North Carolina State University   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CHEMICAL ACTIVATION; DEGRADATION; DIFFUSION IN SOLIDS; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

OXIDATION ENHANCED DIFFUSION (OED);

MOSFET DEVICES;

EID: 0031237178     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622613     Document Type: Article

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