메뉴 건너뛰기




Volumn 109, Issue 7, 2011, Pages

Challenges toward gigabit-scale spin-transfer torque random access memory and beyond for normally off, green information technology infrastructure (Invited)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAY CONFIGURATIONS; DESIGN ISSUES; FEATURE SIZES; GREEN IT; INFORMATION TECHNOLOGY INFRASTRUCTURE; MEMORY CELL; MEMORY STRUCTURE; MULTI-BITS; NON-VOLATILE RAMS; NORMALLY OFF; OPERATION MODE; POWER CONSUMPTION; RANDOM ACCESS MEMORIES; RESISTANCE-AREA PRODUCTS; SPIN TRANSFER TORQUE; THERMAL STABILITY; TMR DEVICE; TUNNELING MAGNETO RESISTIVE;

EID: 79955430982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3556681     Document Type: Conference Paper
Times cited : (27)

References (19)
  • 10
    • 77957929606 scopus 로고    scopus 로고
    • Non-volatile spin-transfer torque RAM (STT-RAM): An analysis of chip data, thermal stability and scalability
    • in
    • A. Driskill-Smith, Non-volatile spin-transfer torque RAM (STT-RAM): An analysis of chip data, thermal stability and scalability., in IEEE International Memory Workshop (2010), pp. 39-40.
    • (2010) IEEE International Memory Workshop , pp. 39-40
    • Driskill-Smith, A.1
  • 12
    • 31844438488 scopus 로고    scopus 로고
    • 10.11432FJJAP.44.L1267
    • J. Hayakawa, Jpn. J. Appl. Phys. 44, L1267 (2005). 10.11432FJJAP.44.L1267
    • (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 1267
    • Hayakawa, J.1
  • 17
    • 77957930077 scopus 로고    scopus 로고
    • Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond
    • in
    • R. Takemura, Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond, in IEEE International Memory Workshop (2010), pp. 37-38.
    • (2010) IEEE International Memory Workshop , pp. 37-38
    • Takemura, R.1
  • 18
    • 77952348902 scopus 로고    scopus 로고
    • A disturbance-free read scheme and a compact stochastic-spin-dynamics- based MTJ circuit model for Gb-scale SPRAM
    • in
    • K. Ono, A disturbance-free read scheme and a compact stochastic-spin- dynamics-based MTJ circuit model for Gb-scale SPRAM, in IEEE International Electron Devices Meeting (2009), pp. 9.3.1-9.3.4.
    • (2009) IEEE International Electron Devices Meeting , pp. 931-934
    • Ono, K.1
  • 19
    • 77957864471 scopus 로고    scopus 로고
    • A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions
    • in
    • T. Ishigaki, A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions, in Symposium on VLSI Technology (2010), pp. 47-48.
    • (2010) Symposium on VLSI Technology , pp. 47-48
    • Ishigaki, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.