Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3

Solid-State Electronics

Volumn 53, Issue 12, 2009, Pages 1273-1279

  Lucovsky, Gerald ^a   Chung, Kwun Bum ^d   Miotti, Leonardi ^a   Bastos, Karen Pas ^a   Amado, Carolina ^b   Schlom, Darrell ^b,c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c Cornell University   (United States)

^d Dankook University   (South Korea)

Author keywords

Alternative valence defects and alloy atoms; Complex oxides; Insulator metal phase transition; Transition metal elemental oxides; Vacancy defects

Indexed keywords

ALTERNATIVE VALENCE DEFECTS AND ALLOY ATOMS; COMPLEX OXIDES; INSULATOR-METAL PHASE; VACANCY DEFECTS;

ATOMS; DEFECTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HAFNIUM; HAFNIUM COMPOUNDS; IMPURITIES; LEAD; METAL RECOVERY; METALLIC COMPOUNDS; METALS; OXIDES; SCANDIUM; VACANCIES;

METAL INSULATOR TRANSITION;

EID: 71649093363     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.10.012     Document Type: Article

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