Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire

Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

  Hattori, Junichi ^a,b   Uno, Shigeyasu ^a,b   Nakazato, Kazuo ^a,b   Mori, Nobuya ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONONS; ANALYTICAL FORMULAS; COMPACT FORMULAS; COMPACT MODEL; ELECTRON DENSITIES; FORM FACTORS; ORIENTED SILICON; ROOM TEMPERATURE; SEMICONDUCTOR NANOWIRE; SUB-BANDS; ULTRAFINE;

ACOUSTICS; APPROXIMATION THEORY; CARRIER CONCENTRATION; ELECTROMAGNETIC WAVE EMISSION; ELECTRON DENSITY MEASUREMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; GENE EXPRESSION; NANOWIRES; PHONONS; SEMICONDUCTING SILICON;

ELECTRONS;

EID: 76949089200     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3280007     Document Type: Article

References (35)

1. N. Singh, A. Agarwal, L. K. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H. Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D.-L. Kwong. IEEE Electron Device Lett. 27, 383 (2006). 10.1109/LED.2006.873381
2. K. H. Yeo, S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Cho, K. H. Hong, S. K. Yun, M. S. Lee, N. M. Cho, K. H. Lee, D. Y. Hwang, B. K. Park, D. W. Kim, D. G. Park, and B. I. Ryu, Tech. Dig.-Int. Electron Devices Meet. 2006, 539.
3. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001). 10.1126/science.1062711 (Pubitemid 32777412)
4. H. Sakaki, Jpn. J. Appl. Phys., Part 2 19, L735 (1980). 10.1143/JJAP.19.L735
5. R. Kotlyar, B. Obradovic, P. Matagne, M. Stettler, and M. D. Giles, Appl. Phys. Lett. 84, 5270 (2004). 10.1063/1.1762695
6. E. B. Ramayya, D. Vasileska, S. M. Goodnick, and I. Knezevic, IEEE Trans. Nanotechnol. 6, 113 (2007). 10.1109/TNANO.2006.888521 (Pubitemid 46181294)
7. S. Jin, M. V. Fischetti, and T. Tang, J. Appl. Phys. 102, 083715 (2007). 10.1063/1.2802586
8. A. Godoy, F. Ruiz, C. Sampedro, F. Gámiz, and U. Ravaioli, Solid-State Electron. 51, 1211 (2007). 10.1016/j.sse.2007.07.025 (Pubitemid 47384804)
9. V. G. Grigoryan and D. G. Sedrakyan, Sov. Phys. Acoust. 29, 281 (1983).
10. N. Nishiguchi, Jpn. J. Appl. Phys., Part 1 33, 2852 (1994). 10.1143/JJAP.33.2852
11. N. Nishiguchi, Phys. Rev. B 50, 10970 (1994). 10.1103/PhysRevB.50.10970
12. M. A. Stroscio, Y. M. Sirenko, S. Yu, and K. W. Kim, J. Phys.: Condens. Matter 8, 2143 (1996). 10.1088/0953-8984/8/13/006
13. S. Uno, D. Yong, and N. Mori, Phys. Rev. B 79, 235328 (2009). 10.1103/PhysRevB.79.235328
14. N. Bannov, V. Aristov, V. Mitin, and M. A. Stroscio, Phys. Rev. B 51, 9930 (1995). 10.1103/PhysRevB.51.9930
15. N. Bannov, V. Aristov, and V. Mitin, J. Appl. Phys. 78, 5503 (1995). 10.1063/1.359667
16. B. A. Glavin, V. I. Pipa, V. V. Mitin, and M. A. Stroscio, Phys. Rev. B 65, 205315 (2002). 10.1103/PhysRevB.65.205315
17. S. Uno, J. Hattori, K. Nakazato, and N. Mori, Math. Comput. Modell. (to be published).
18. L. Donetti, F. Gámiz, J. B. Roldán, and A. Godoy, J. Appl. Phys. 100, 13701 (2006). 10.1063/1.2208849 (Pubitemid 44090853)
19. S. Uno and N. Mori, Proceedings of the Silicon Nanoelectronics Workshop, 2007 (unpublished), pp. 91-92.
20. S. Uno and N. Mori, Jpn. J. Appl. Phys., Part 2 46, L923 (2007). 10.1143/JJAP.46.L923 (Pubitemid 350085432)
21. S. Yu, K. W. Kim, M. A. Stroscio, G. J. Iafrate, and A. Ballato, Phys. Rev. B 50, 1733 (1994). 10.1103/PhysRevB.50.1733
22. S. Yu, K. W. Kim, M. A. Stroscio, G. J. Iafrate, and A. Ballato, Phys. Rev. B 51, 4695 (1995). 10.1103/PhysRevB.51.4695
23. S. Yu, K. W. Kim, M. A. Stroscio, G. J. Iafrate, and A. Ballato, J. Appl. Phys. 80, 2815 (1996). 10.1063/1.363199
24. N. Nishiguchi, Phys. Rev. B 54, 1494 (1996). 10.1103/PhysRevB.54.1494
25. A. K. Buin, A. Verma, A. Svizhenko, and M. P. Anantram, Nano Lett. 8, 760 (2008). 10.1021/nl0727314 (Pubitemid 351346053)
26. E. B. Ramayya, D. Vasileska, S. M. Goodnick, and I. Knezevic, J. Appl. Phys. 104, 063711 (2008). 10.1063/1.2977758
27. A. K. Buin, A. Verma, and M. P. Anantram, J. Appl. Phys. 104, 053716 (2008). 10.1063/1.2974088
28. V. A. Fonoberov and A. A. Balandin, Nano Lett. 6, 2442 (2006). 10.1021/nl061554o (Pubitemid 46076930)
29. B. A. Auld, Acoustic Fields and Waves in Solids (Willey, New York, 1973).
30. K. F. Graff, Wave Motion in Elastic Solids (Dover, New York, 1991).
31. J. Hattori, S. Uno, N. Mori, and K. Nakazato, Math. Comput. Modell. (to be published).
32. E. Gnani, S. Reggiani, A. Gnudi, P. Parruccini, R. Colle, M. Rudan, and G. Baccarani, IEEE Trans. Electron Devices 54, 2243 (2007). 10.1109/TED.2007. 902901
33. M. V. Fischetti, IEEE Trans. Electron Devices 38, 634 (1991). 10.1109/16.75176
34. H. A. E.-Hamid, J. Roig, and B. Iíguez, Solid-State Electron. 51, 414 (2007). 10.1016/j.sse.2006.12.009 (Pubitemid 46497260)
35. F. Djeffal, M. A. Abdi, Z. Dibi, M. Chahdi, and A. Benhaya, Mater. Sci. Eng., B 147, 239 (2008). 10.1016/j.mseb.2007.08.034 (Pubitemid 351179193)