Effect of hydrogen on carbon nanowall growth by microwave plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 2, 2011, Pages

  Suzuki, Seiya ^a   Chatterjee, Anindita ^b   Cheng, Chia Liang ^b   Yoshimura, Masamichi ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOWALLS; CATALYST-FREE; EFFECT OF HYDROGEN; FLOW RATIOS; FLOWRATE RATIO; GROWTH METHOD; HIGH GROWTH RATE; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; NUCLEATION DENSITIES; SEM;

HYDROGEN; MICROWAVES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; VAPOR DEPOSITION;

AMORPHOUS CARBON;

EID: 79955160789     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.01AF08     Document Type: Conference Paper

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