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Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 3, 2011, Pages

Bias-induced threshold voltage shifts in organic thin-film transistors by soluble fullerene layers on gate dielectric

(3) Mohamad, Khairul Anuar a,b Uesugi, Katsuhiro a Fukuda, Hisashi a

a MURORAN INSTITUTE OF TECHNOLOGY (Japan)

b UNIVERSITI MALAYSIA SABAH (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE LAYER; DEVICE OPERATIONS; ELECTRON ACCEPTOR; FULLERENE DERIVATIVE; FULLERENE LAYERS; GATE BIAS; METHYL ESTERS; MODE OPERATION; NEGATIVE V; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTORS; PENTACENES; SHORT DURATIONS; THRESHOLD VOLTAGE SHIFTS;

AGGLOMERATION; BUTYRIC ACID; CARRIER MOBILITY; ESTERS; FULLERENES; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

BIAS VOLTAGE;

EID: 79955140652 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.01BC04 Document Type: Conference Paper

Times cited : (3)

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