In situ two-step plasma enhanced atomic layer deposition of Ru/RuN x barriers for seedless copper electroplating

Journal of the Electrochemical Society

Volumn 158, Issue 4, 2011, Pages

  Chang, Chih Chieh ^a   Pan, Fu Ming ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION STRENGTHS; BI-LAYER; BI-LAYER STRUCTURE; CHEMICAL DEGRADATION; COPPER ELECTROPLATING; CU ELECTROPLATING; CU LAYERS; DIELECTRIC LAYER; IN-SITU; INTERCONNECT TECHNOLOGY; MESOPOROUS; NANO-METER SCALE; PASSIVATION LAYER; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PULL-OFF; TEM; TENSILE TESTS; THERMAL DECOMPOSITIONS; THERMAL STABILITY; THERMAL TREATMENT; THERMAL-ANNEALING; TWO-STEP APPROACH;

ATOMIC LAYER DEPOSITION; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; FILM PREPARATION; PASSIVATION; PLASMA DEPOSITION; PYROLYSIS; SILICON COMPOUNDS; TENSILE TESTING; THERMODYNAMIC STABILITY;

ELECTROPLATING;

EID: 79955132150     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3554734     Document Type: Article

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