Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 113-115

  Torazawa, Naoki ^a   Hinomura, Toru ^a   Mori, Kenichi ^b   Koyama, Yuki ^c   Hirao, Shuji ^a   Kobori, Etsuyoshi ^a   Korogi, Hayato ^a   Maekawa, Kazuyoshi ^b   Tomita, Kazuo ^b   Chibahara, Hiroyuki ^b   Suzumura, Naohito ^b   Asai, Koyu ^b   Miyatake, Hiroshi ^b   Matsumoto, Susumu ^a  

^a PANASONIC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c Renesas Semiconductor Engineering Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BARRIER PROPERTIES; CU DIFFUSION; CU-INTERCONNECTS; FILM PROPERTIES; N-DOPING; RELIABILITY PERFORMANCE;

ALLOYS; COPPER ALLOYS; DESORPTION; OPTICAL INTERCONNECTS; RELIABILITY; RUTHENIUM ALLOYS; TANTALUM; TANTALUM ALLOYS;

COPPER;

EID: 70349451843     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090356     Document Type: Conference Paper

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5. K. Mori, et al., Proc. of IITC 2008, pp. 99-101.
6. K. Mori, et al., Proc. of AMC 2006, p. 467.