Local electrical properties of the 4H-SiC(0001)/graphene interface

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 769-776

  Sonde, Sushant ^a,b   Vecchio, Carmelo ^a,b   Giannazzo, Filippo ^a   Yakimova, Rositza ^c   Rimini, Emanuele ^a,d   Raineri, Vito ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c LINKÖPING UNIVERSITY   (Sweden)

^d UNIVERSITY OF CATANIA   (Italy)

Author keywords

Buffer layer; Graphene SiC interface; Local electron mean free path; Scanning capacitance spectroscopy; Scanning current spectroscopy

Indexed keywords

BUFFER LAYERS; CAPACITANCE; CAPACITANCE MEASUREMENT; GRAPHENE; INTERFACE STATES; LOW-K DIELECTRIC; SCANNING; SCREENING; SEMICONDUCTOR METAL BOUNDARIES; SILICA; SILICON OXIDES;

CURRENT TRANSPORT; DIELECTRIC SCREENING; ELECTRON MEAN FREE PATH; FERMI LEVEL PINNING; HIGHLY ORIENTED PYROLITIC GRAPHITES; LATERAL RESOLUTION; POSITIVELY CHARGED; SCANNING CAPACITANCE SPECTROSCOPY;

SILICON CARBIDE;

EID: 79955093860     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.769     Document Type: Conference Paper

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