Rapid thermal annealing of rare earth implanted ZnO epitaxial layers

Optical Materials

Volumn 33, Issue 7, 2011, Pages 1139-1142

  Miranda, S M C ^a   Peres, M ^b   Monteiro, T ^b   Alves, E ^a,c   Sun, H D ^d   Geruschke, T ^e   Vianden, R ^e   Lorenz, K ^a,c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e UNIVERSITY OF BONN   (Germany)

Author keywords

Europium; Ion implantation; Praseodymium; Rare earth; RBS; Zinc oxide

Indexed keywords

EUROPIUM; II-VI SEMICONDUCTORS; ION IMPLANTATION; IONS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PRASEODYMIUM; RARE EARTHS; RUBIDIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

CRYSTAL QUALITIES; INTERSTITIAL SITES; METAL-ORGANIC VAPOUR PHASE EPITAXY; NITROGEN ATMOSPHERES; OPTICAL ACTIVATION; RAPID THERMAL ANNEALING (RTA); RUTHERFORD BACK-SCATTERING SPECTROMETRY; SAPPHIRE SUBSTRATES;

RAPID THERMAL ANNEALING;

EID: 79955070143     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2010.10.009     Document Type: Conference Paper

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