메뉴 건너뛰기




Volumn 266, Issue 12-13, 2008, Pages 2780-2783

Defect studies on fast and thermal neutron irradiated GaN

Author keywords

Defects; GaN; Neutron irradiation; Photoluminescence

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; NEUTRON IRRADIATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; X RAY DIFFRACTION;

EID: 44649090623     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.03.116     Document Type: Article
Times cited : (24)

References (14)
  • 1
    • 44649136800 scopus 로고    scopus 로고
    • Gil B. (Ed), Oxford
    • In: Gil B. (Ed). Group III Nitride Semiconductor Compounds, Physics and Applications. Semiconductor Science and Technology Vol. 6 (1998), Oxford
    • (1998) Semiconductor Science and Technology , vol.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.