Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition

Solid-State Electronics

Volumn 52, Issue 11, 2008, Pages 1833-1836

  Shen, Yiqun ^a   Xu, Ning ^a   Hu, Wei ^a   Xu, Xiaofeng ^a   Sun, Jian ^a   Ying, Zhifeng ^a   Wu, Jiada ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Bismuth doping; p Type ZnSe films; Pulsed laser deposition

Indexed keywords

BISMUTH; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DEPOSITION; DOPING (ADDITIVES); FILM PREPARATION; HOLE CONCENTRATION; LASERS; MICROSCOPIC EXAMINATION; PHOTOELECTRON SPECTROSCOPY; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SILICON; X RAY ANALYSIS; ZINC; ZINC ALLOYS;

AMBIENT PRESSURES; BISMUTH DOPING; BISMUTH-DOPED; CRYSTALLINITY; DOPANT SOURCES; FILM DEPOSITIONS; P-TYPE ZNSE FILMS; PULSED LASERS; SHALLOW ACCEPTORS; SILICON SUBSTRATES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; ZNSE FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 55049133201     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.005     Document Type: Article

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