Memory effects of all-solution-processed oxide thin-film transistors using ZnO nanoparticles

Journal of the Society for Information Display

Volumn 19, Issue 5, 2011, Pages 404-409

  Bae, Jung Hyeon ^a   Kim, Gun Hee ^a   Jeong, Woong Hee ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

Nanoparticles; Non volatile memory; Oxide semiconductor; Solution process; Thin film transistor

Indexed keywords

ACTIVE CHANNELS; CHANNEL INTERFACE; ELECTRON TRAPPING; MEMORY APPLICATIONS; MEMORY EFFECTS; MEMORY FUNCTIONS; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY; OXIDE SEMICONDUCTOR; SOLUTION PROCESS; SOLUTION-PROCESSED; SOURCE AND DRAIN ELECTRODES; TRANSFER CHARACTERISTICS; TRAPPING LAYERS; TRAPPING SITES; ZNO; ZNO NANOPARTICLES;

CHARGE TRAPPING; GATE DIELECTRICS; GATES (TRANSISTOR); NANOPARTICLES; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 79955063464     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID19.5.404     Document Type: Article

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